CAPACITANCE TIME TRANSIENT CHARACTERISTICS OF PULSED MOS CAPACITOR APPLICATION IN MEASUREMENT OF SEMICONDUCTOR PARAMETERS

Authors
ZHANG X DING K
Citation
X. Zhang et K. Ding, CAPACITANCE TIME TRANSIENT CHARACTERISTICS OF PULSED MOS CAPACITOR APPLICATION IN MEASUREMENT OF SEMICONDUCTOR PARAMETERS, IEE proceedings. Part G. Circuits, devices and systems, 140(6), 1993, pp. 449-452
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Part G. Circuits, devices and systems → ACNP
ISSN journal
09563768
Volume
140
Issue
6
Year of publication
1993
Pages
449 - 452
Database
ISI
SICI code
0956-3768(1993)140:6<449:CTTCOP>2.0.ZU;2-4
Abstract
Using Rabbani's model for generation width, a differential equation, w hich describes the capacitance-time (C-t) transient characteristics of pulsed MOS capacitors was obtained. The theoretical C-t transient cha racteristics can be obtained by integrating this differential equation . It has also been shown that the minority generation lifetime of semi conductors can be determined by matching an experimental C-t transient characteristic with the theoretical one.