NONEQUILIBRIUM FERMI ENERGY CHARACTERISTICS OF N-SEMICONDUCTOR AND P-SEMICONDUCTOR ELECTRODES UNDER DARK AND PHOTOCURRENTS UP TO LARGE BANDBENDING

The dynamics of chemical charge transfer processes on semiconductor el ectrodes is essentially influenced by nonequilibrium Fermi energy char acteristics of electrons and holes. In this context, the carrier-trans port-controlled bending of nonequilibrium Fermi energies in the barrie r regime has once more been proved up to large band bending, both unde r dark and photocurrents, on n- and p-GaAs and n-GaP electrodes. The c riteria of nondegeneracy of majority and minority Fermi energies based on dark and photoadmittance measurements are discussed in greater det ail. On the addressed examples, conservation of nondegeneracy under st rong band bending has been confirmed up to barrier breakdown.