CHARGE DEPOSITION IN GAS-FILLED CHANNELS WITH INSULATING WALLS

Citation
Dw. Auckland et al., CHARGE DEPOSITION IN GAS-FILLED CHANNELS WITH INSULATING WALLS, IEE proceedings. A, Science, measurement and technology, 140(6), 1993, pp. 509-516
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09607641
Volume
140
Issue
6
Year of publication
1993
Pages
509 - 516
Database
ISI
SICI code
0960-7641(1993)140:6<509:CDIGCW>2.0.ZU;2-4
Abstract
Solid insulation suffers from the formation of treelike structures of narrow gas filled channels originating from points of electrical stres s concentration. Although the growth of these channels, and the develo pment of the characteristic tree structures, have been the subject of many observational studies, the mechanisms involved have yet to be elu cidated. A significant observation is that, in their early stages of d evelopment, the channels have a high electrical strength. This has bee n assigned to the effects of charge trapping by the surrounding insula tion, leading to avalanche suppression partly by the creation of back fields. The work described establishes the presence and distribution o f deposited charge in asymmetrically stressed synthetic tree channels cast and moulded in polymeric insulation. Charge trapping in straight open ended channels was studied at the outset. But practical tree chan nels are rarely straight. They usually develop at an angle to the symm etrical axis of the field, contain numerous bends, and are closed at t heir extreme end by insulation. The effect of each of these aspects wa s studied. The results obtained help to explain some of the phenomena associated with tree growth, and go one step towards a complete unders tanding of the mechanisms underlying the growth of tree channels and s tructures in solid insulation.