FLIP-CHIP PLANAR GALNAS LNP P-I-N PHOTODIODES ANALYSIS OF FREQUENCY-RESPONSE/

High-speed response, high-manufacturing-yield photodiodes sill be need ed for optical interconnection in computer and for broadband networks. Frequency responses of a new planar GaInAs/InP p-i-n photodiode for f lip-chip bonding are analyzed. To study changes caused by the new stru cture, responses are related to device parameters including photoabsor ption layer thickness, p-i-n junction diameter, and the size of the fo rward biased p-i-n junction. Forward biasing is a peculiarity of our p hotodiodes. A photodiode with an optimized design showed good characte ristics.