REAL COLOR CATHODOLUMINESCENCE SCANNING ELECTRON-MICROSCOPY - A NEW EFFECTIVE METHOD FOR STUDY OF SIC MATERIALS AND DEVICES

Color cathodoluminescence scanning electron microscopy (CCL-SEM) studi es prove the correctness of available information concerning space dis tribution of luminescence centers in SiC layers. Established facts may be applied for investigation of the polytypism, space distribution of impurities, and native defects induced during growth by high-energy p articles radiation or by diffusion, as well as by the mechanisms of cr ystal formation. This paper presents a short survey of diagnostic avai lability of the CCL-SEM technique for inspection of the SIC materials and devices.