The dependence on time t of the room temperature luminescence S(t) emi
tted by Si crystals cleaved in vacuum, is strongly affected by relativ
ely low electric current densities passed through the specimen at the
initiation Df cleavage, even though the luminescence continues long af
ter the cracking is complete and the current has stopped. Above approx
imately 30 mA cm(-2), there is no further effect. An empirical express
ion has been obtained for S(t), having one adjustable parameter that v
aries with the current density. The effects do not appear to be possib
le unless cleaved surfaces attain temporary high temperatures, and poi
nt to the complexity of bond rupture phenomena. (C) 1996 American Inst
itute of Physics.