ACCURATE IN-SITU LATTICE MATCHING FROM THE DYNAMICS OF HIGH-ENERGY ELECTRON-DIFFRACTION

Authors
CUNNINGHAM JE PATHAK RN JAN WY
Citation
Je. Cunningham et al., ACCURATE IN-SITU LATTICE MATCHING FROM THE DYNAMICS OF HIGH-ENERGY ELECTRON-DIFFRACTION, Applied physics letters, 68(3), 1996, pp. 394-396
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
3
Year of publication
1996
Pages
394 - 396
Database
ISI
SICI code
0003-6951(1996)68:3<394:AILMFT>2.0.ZU;2-C
Abstract
We report an in situ electron diffraction measurement which allows In0 .53Ga0.47As to be lattice matched to InP during growth. This method us es analysis of the dynamics of intensity oscillations during electron diffraction to determine when lattice matched growth occurs. With this method we demonstrate closely lattice matched ternary alloys; InGaAs on InP, GaInP on GaAs, and quarternary alloys of InAlGaAs on Inp. (C) 1996 American Institute of Physics.