S. Marcinkevicius et al., TIME AND SPATIALLY-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF NONSTOICHIOMETRIC GAAS, Applied physics letters, 68(3), 1996, pp. 397-399
Carrier trapping times in different parts of chemically profiled sampl
es of nonstoichiometric GaAs obtained by molecular beam epitaxy at low
substrate temperatures or by As or Ca ion implantation were determine
d by using temporally resolved photoluminescence measurement. No short
ening of the trapping time by the presence of metallic precipitates an
d other extended defects was evidenced. (C) 1996 American Institute of
Physics.