A JOSEPHSON FIELD-EFFECT TRANSISTOR USING AN INAS-INSERTED-CHANNEL IN0.52AL0.48AS IN0.53GA0.47AS INVERTED MODULATION-DOPED STRUCTURE/

Authors
AKAZAKI T TAKAYANAGI H NITTA J ENOKI T
Citation
T. Akazaki et al., A JOSEPHSON FIELD-EFFECT TRANSISTOR USING AN INAS-INSERTED-CHANNEL IN0.52AL0.48AS IN0.53GA0.47AS INVERTED MODULATION-DOPED STRUCTURE/, Applied physics letters, 68(3), 1996, pp. 418-420
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
3
Year of publication
1996
Pages
418 - 420
Database
ISI
SICI code
0003-6951(1996)68:3<418:AJFTUA>2.0.ZU;2-I
Abstract
A Josephson field effect transistor (JOFET) was coupled with a two-dim ensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. Th e characteristics df this JOFET are much improved over previous device s by using a high electron mobility transistor (HEMT)-type gate instea d of the usual metal-insulator-semiconductor (MIS)-type gate. The supe rconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this prov ides voltage gain over 1 for a JOFET. (C) 1996 American Institute of P hysics.