SIMULTANEOUS TEMPERATURE-MEASUREMENT OF WAFERS IN CHEMICAL-MECHANICALPOLISHING OF SILICON DIOXIDE LAYER

The wafer temperature in chemical mechanical polishing (CMP) of silico n dioxide layers was measured. When the temperatures of both the polis hing slurry and the polishing pad were controlled at 8 degrees C, the measured wafer temperatures were 10-20 degrees C. The temperature dist ribution affected the thickness of the polished oxide layer. When the wafer temperature was high, the oxide layer removal rate increased bec ause of the increased reaction of the slurry with the oxide layer. It was clear that there was a linear relationship between the measured wa fer temperature and the oxide layer removal rate. The effects of groov ing several typical polishing pads for oxide layer polishing were inve stigated. It was found that grooves on the pad increased the uniformit y of the removal of the oxide layer from the wafer.