SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

Authors
KHAN MRH NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation
Mrh. Khan et al., SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, JPN J A P 1, 34(12A), 1995, pp. 6375-6376
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
34
Issue
12A
Year of publication
1995
Pages
6375 - 6376
Database
ISI
SICI code
Abstract
Schottky barrier diodes of Au-n-Al0.14Ga0.86N grown by Organometallic Vapor Phase Epitaxy were obtained and characterized between 77 K and 3 73 K. Under forward bias the value of the ideality parameter n=1.41 an d the threshold voltage is 0.75 V. The reverse bias leak current is be low 10(-10)A. on a reverse bias of 10 V. The barrier height (Phi(B)) w as determined to be (1.17+/-0.03)eV and (1.3+/-0.05) eV by the current -voltage and the capacitance-voltage measurement respectively.