METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF ALGAAS USING TERTIARYBUTYLARSINE

The amounts of intrinsic carbon incorporation in AlGaAs epilayers grow n by metalorganic chemical vapor deposition (MOCVD) were compared betw een ones grown using AsH3 and ones grown using tertiarybuthylarsine (T BAs). The hole concentration of the epilayers grown using TBAs was muc h lower than that of the epilayers grown using AsH3. It has been sugge sted that As-2 and/or As-4 molecules have the ability to remove methyl groups originating from group-III source materials.