SIDEWALL-LESS DEPTH PROFILING WITH AUGER-ELECTRON SPECTROSCOPY

In Auger depth profiling in combination with ion sputtering, use of an insular sample has improved the depth resolution and has enabled pinp oint analysis without extending measurement time. bn island capped wit h an erosion-resistant film remains on the substrate after chemical et ching. When the island is prepared to be smaller than the area subject ed to ion irradiation, no crater or its sidewall appears during depth profiling. It is demonstrated that in the determination of depth resol ution, surface roughening owing to sputter deposition from the sidewal l of a crater plays a key role, in addition to the interference by sig nals from a sidewall.