A method of generating very small hole patterns by introduction of tra
nsfer bias into a resist pattern after original resist pattern generat
ion has been developed and evaluated. Introduction of transfer bias wa
s carried out using a resin overcoating and strippig process and a nov
olak resist pattern was used as the original hole pattern. Tire overco
ating resin used was polymethylmethacrylate (PMMA) and transfer bias w
as introduced by intermixing of novolak resin and PMMA during the PMMA
baking step. From scanning electron microscope (SEM) observation, it
appeared that 0.20 mu m hole pattern generation was possible by i-line
lithography. The amount of undersize was controllable by PMMA Lake te
mperature, and 0.06-0.15 mu m undersize could be achieved by using a b
ake temperature range of 60-120 degrees C. From results of etching SiO
2 substrate using overcoat treated hole pattern, it appeared that the
mixinglayer functioned as an etching mask for oxide film.