PROXIMITY EFFECT CORRECTION IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCATTERING WITH ANGULAR LIMITATION PROJECTION ELECTRON-BEAM LITHOGRAPHY)

Several schemes have been proposed for proximity effect correction (PE C) in e-beam lithography systems: biasing, dose control and GHOST. Typ ically, the correction is applied tu the pattern data, a process that is computationally demanding and expensive in terms of data handling. A process which is independent of the pattern information, and could b e implemented in the tool hardware, would be an attractive alternative . In this paper we present such a solution to the proximity effect cor rection problem, for use in SCALPEL (S Cattering with Angular Limitati on in Projection Electron Beam Lithography).