FABRICATION OF PETAL-SHAPED VERTICAL FIELD EMITTER ARRAYS

We have invented a novel field emitter array (FEA) with a petal-shaped design. The emitter has a metal-disk fitted into a silicon (III) pyra midal hole; viewed from an angle it resembles the petal of a flower, W e have elucidated the relationships between the detailed structure and the emission characteristics and have achieved the threshold voltage of 60 V, the emission current of 20 mu A at the gate voltage of 150 V and the anode current fraction of 90% in this new structure. We could fabricate tile present FEA as easily as tile disk-shaped lateral FEA, and it gives a much higher anode current fraction than does the latter . We have also investigated tile improvement of the surface condition of the emitter, and obtained the lowest threshold voltage of 17V with metal-coated FEAs.