COMPOSITION PROFILES VERSUS GROWTH PRESSURE AND TEMPERATURE IN EPITAXIAL HGZNTE LAYERS

Authors
JAKSIC Z DJURIC Z DJINOVIC Z PETROVIC R
Citation
Z. Jaksic et al., COMPOSITION PROFILES VERSUS GROWTH PRESSURE AND TEMPERATURE IN EPITAXIAL HGZNTE LAYERS, Physica status solidi. a, Applied research, 152(2), 1995, pp. 451-459
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
152
Issue
2
Year of publication
1995
Pages
451 - 459
Database
ISI
SICI code
0031-8965(1995)152:2<451:CPVGPA>2.0.ZU;2-T
Abstract
A procedure for composition optimization of mercury zinc telluride (Hg 1-xZnxTe) layers grown by isothermal vapor phase epitaxy (ISOVPE) is p resented. A quantitative model of mercury zinc telluride ISOVPE growth is proposed. The model is valid for temperatures between 450 and 600 degrees C and for solid HgTe source. A good agreement between experime ntal and calculated compositional profiles is obtained. Some peculiari ties of the ISOVPE Hg1-xZnxTe layers were analyzed using the presented model. A theoretical and experimental method for engineering of homog eneous MZT samples is proposed. The presented procedure can be used to tailor MZT epitaxial layers with desired properties, suitable for fab rication of infrared devices.