ESTIMATE OF THE EFFECT OF QUANTUM HOLE SH APE ON THE ELECTRON-TRANSFER IN THE INVERSION LAYER OF MOS FIELD TRANSISTORS

Citation
Vm. Borzdov et al., ESTIMATE OF THE EFFECT OF QUANTUM HOLE SH APE ON THE ELECTRON-TRANSFER IN THE INVERSION LAYER OF MOS FIELD TRANSISTORS, Pis'ma v Zurnal tehniceskoj fiziki, 21(7), 1995, pp. 69-73
Citations number
8
Categorie Soggetti
Physics, Applied
ISSN journal
03200116
Volume
21
Issue
7
Year of publication
1995
Pages
69 - 73
Database
ISI
SICI code
0320-0116(1995)21:7<69:EOTEOQ>2.0.ZU;2-9