VALENCE-BAND STRUCTURE OF (001), (012), (011), (111), (112), (113) GAASALGAAS QUANTUM-WELLS

Authors
LOS J FASOLINO A CATELLANI A
Citation
J. Los et al., VALENCE-BAND STRUCTURE OF (001), (012), (011), (111), (112), (113) GAASALGAAS QUANTUM-WELLS, Microelectronics, 26(8), 1995, pp. 745-749
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
26
Issue
8
Year of publication
1995
Pages
745 - 749
Database
ISI
SICI code
0026-2692(1995)26:8<745:VSO(((>2.0.ZU;2-Z
Abstract
We present a detailed theoretical study of the in-plane dispersion of the spin-orbit coupled valence band of GaAs-AlGaAs quantum wells grown along the low-index directions (001), (011), (012), (111), (112) and (113). We find that the confinement energies, warping, effective in-pl ane masses and hole mixing strongly depend on the direction of confine ment. Beside the numerical approach, we have developed a perturbative scheme which is able to predict qualitative trends for confinement ene rgies and in-plane effective masses.