MBE GROWTH AND RAMAN ANALYSIS OF [HHK]GAAS (SI OR CAF2) HIGHLY STRAINED HETEROSTRUCTURES

Authors
PUECH P DARAN E LANDA G FONTAINE C PIZANI PS CARLES R
Citation
P. Puech et al., MBE GROWTH AND RAMAN ANALYSIS OF [HHK]GAAS (SI OR CAF2) HIGHLY STRAINED HETEROSTRUCTURES, Microelectronics, 26(8), 1995, pp. 789-795
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
26
Issue
8
Year of publication
1995
Pages
789 - 795
Database
ISI
SICI code
0026-2692(1995)26:8<789:MGARAO>2.0.ZU;2-J
Abstract
Highly strained GaAs layers have been grown by molecular beam epitaxy on (100)-, (111)- or (112)-oriented Si or CaF2 substrates. The origin, sign, bisotropic nature, value, homogeneity and relaxation of the bui lt-in strain have been studied by Raman spectroscopy. Specific measure ments have been performed by using selection rules and line shape anal ysis over a wide temperature range.