DEPTH PROFILING OF W, O AND H IN TUNGSTEN TRIOXIDE THIN-FILMS USING RBS AND ERDA TECHNIQUES

Citation
O. Bohnke et al., DEPTH PROFILING OF W, O AND H IN TUNGSTEN TRIOXIDE THIN-FILMS USING RBS AND ERDA TECHNIQUES, Applied surface science, 93(1), 1996, pp. 45-52
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
93
Issue
1
Year of publication
1996
Pages
45 - 52
Database
ISI
SICI code
0169-4332(1996)93:1<45:DPOWOA>2.0.ZU;2-1
Abstract
Tungsten trioxide thin films obtained by vacuum evaporation of tungste n oxide powder of high purity were analyzed using Rutherford backscatt ering spectroscopy (RES) and elastic recoil detection analysis (ERDA) with He-4(+) ions of 2.85 MeV for W, O and H profiling. The films have been deposited onto either C or Si substrates. It has been found that the film stoichiometry depends on the pressure in the vacuum chamber before and during the evaporation process. The films contain water mol ecules which can be removed easily by heating the samples up to 180 de grees C: in vacuum. Most of the water is then weakly bound to the oxid e. It has also been shown that the films mostly adsorb oxygen-containi ng species during storage in air.