O. Bohnke et al., DEPTH PROFILING OF W, O AND H IN TUNGSTEN TRIOXIDE THIN-FILMS USING RBS AND ERDA TECHNIQUES, Applied surface science, 93(1), 1996, pp. 45-52
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Tungsten trioxide thin films obtained by vacuum evaporation of tungste
n oxide powder of high purity were analyzed using Rutherford backscatt
ering spectroscopy (RES) and elastic recoil detection analysis (ERDA)
with He-4(+) ions of 2.85 MeV for W, O and H profiling. The films have
been deposited onto either C or Si substrates. It has been found that
the film stoichiometry depends on the pressure in the vacuum chamber
before and during the evaporation process. The films contain water mol
ecules which can be removed easily by heating the samples up to 180 de
grees C: in vacuum. Most of the water is then weakly bound to the oxid
e. It has also been shown that the films mostly adsorb oxygen-containi
ng species during storage in air.