OXIDE-GROWTH ENHANCEMENT RELATED TO ANNEALING-INDUCED ARSENIC ACCUMULATION IN THE SI SIO2 INTERFACE REGION/

Authors
BERGER HH MULLER B JACOB K
Citation
Hh. Berger et al., OXIDE-GROWTH ENHANCEMENT RELATED TO ANNEALING-INDUCED ARSENIC ACCUMULATION IN THE SI SIO2 INTERFACE REGION/, Journal of the Electrochemical Society, 143(1), 1996, pp. 15-16
Citations number
16
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
143
Issue
1
Year of publication
1996
Pages
15 - 16
Database
ISI
SICI code
0013-4651(1996)143:1<15:OERTAA>2.0.ZU;2-B
Abstract
A comparison of steam oxidation enhancement (at 800 degrees C) of high ly arsenic-doped Si samples, having an arsenic accumulation (''pile-up '') in the Si/SiO2 interface region caused either by annealing at 1000 degrees C or by the oxidation process itself, shows that the enhancem ent is related to the arsenic accumulation.