ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF NATIVE TIO2 ON TIN

Thin-film polycrystalline TiN with an approximate 2 nm thick native Ti O2 overlayer is bombarded with 50 to 200 eV Ar ions in an electron cyc lotron resonance plasma. In situ x-ray photoelectron spectroscopy and static secondary ion mass spectrometry suggest complete removal of oxy gen from the planar surface, independent of ion energy, with TiO2 rema ining on the columnar grain boundaries. The TiN etching rate increases from 6 to 14 nm/min as the ion energy is raised from 100 to 200 eV. T he TiN stoichiometry does not change with ion bombardment.