STABILIZING DIELECTRIC-CONSTANTS OF FLUORINE-DOPED SIO2-FILMS BY N2O-PLASMA ANNEALING

Authors
TAKEISHI S KUDOH H SHINOHARA R TSUKUNE A SATOH Y HARADA H YAMADA M
Citation
S. Takeishi et al., STABILIZING DIELECTRIC-CONSTANTS OF FLUORINE-DOPED SIO2-FILMS BY N2O-PLASMA ANNEALING, Journal of the Electrochemical Society, 143(1), 1996, pp. 381-385
Citations number
12
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
143
Issue
1
Year of publication
1996
Pages
381 - 385
Database
ISI
SICI code
0013-4651(1996)143:1<381:SDOFSB>2.0.ZU;2-3
Abstract
Fluorine-doped SiO2(FSG) has a low dielectric constant just after depo sition. However, the dielectric constant of FSG gradually increases wi th time when left in air. We have developed a way to stabilize dielect ric constants of FSG left in the air by plasma annealing. We have foun d that N2O-plasma annealing is quite effective for blocking moisture. The dielectric constants of FSG treated by the N2O-plasma annealing ra rely change.