REDUCTIVE DEPOSITION OF PD ON POROUS SILICON FROM AQUEOUS-SOLUTIONS OF PDCL2 - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY

Authors
COULTHARD I JIANG DT LORIMER JW SHAM TK FENG XH
Citation
I. Coulthard et al., REDUCTIVE DEPOSITION OF PD ON POROUS SILICON FROM AQUEOUS-SOLUTIONS OF PDCL2 - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Langmuir, 9(12), 1993, pp. 3441-3445
Citations number
30
Categorie Soggetti
Chemistry Physical
Journal title
Langmuir → ACNP
ISSN journal
07437463
Volume
9
Issue
12
Year of publication
1993
Pages
3441 - 3445
Database
ISI
SICI code
0743-7463(1993)9:12<3441:RDOPOP>2.0.ZU;2-V
Abstract
A method for the deposition of palladium on the vast surface of porous silicon from aqueous solutions of PdCl2 is described. The deposited P d and the porous silicon substrate have been characterized using X-ray absorption fine structure (XAFS) spectroscopy. It is found that depos ition can be carried out in a controlled manner, that the deposited Pd is metallic, and that the oxidation-reduction reaction responsible fo r the reductive deposition of Pd from PdCl2(aq) takes place at specifi c surface sites.