PHOTOREFLECTANCE CHARACTERIZATION OF GAAS AND GAAS GAALAS STRUCTURES GROWN BY MOCVD/

Authors
MISIEWICZ J JEZIERSKI K SITAREK P MARKIEWICZ P KORBUTOWICZ R PANEK M SCIANA B TLACZALA M
Citation
J. Misiewicz et al., PHOTOREFLECTANCE CHARACTERIZATION OF GAAS AND GAAS GAALAS STRUCTURES GROWN BY MOCVD/, Advanced materials for optics and electronics, 5(6), 1995, pp. 321-327
Citations number
14
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
Journal title
Advanced materials for optics and electronics → ACNP
ISSN journal
10579257
Volume
5
Issue
6
Year of publication
1995
Pages
321 - 327
Database
ISI
SICI code
1057-9257(1995)5:6<321:PCOGAG>2.0.ZU;2-4
Abstract
Epitaxial undoped and doped (Si and tn) GaAs and GaAlAs layers as well as heterostructures Of GaAs/GaAlAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR ) has been applied to characterise the layers and heterostructures as well as multiple quantum wells, The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis, A decompos ition of the PR spectrum into spectra connected with the surface regio n and with the interface has been proposed.