ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS

Citation
Z. Ikonic et al., ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS, Physical review. B, Condensed matter, 48(23), 1993, pp. 17181-17193
Citations number
38
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
23
Year of publication
1993
Pages
17181 - 17193
Database
ISI
SICI code
0163-1829(1993)48:23<17181:EOTBAT>2.0.ZU;2-O
Abstract
The electronic properties of twinning boundaries, stacking faults, and a recently proposed structure, the twinning superlattice, in group IV and III-V diamond-type and zinc-blende-type semiconductors are calcul ated and discussed.