HOMOGENEOUS-LINEWIDTH DEPENDENCE OF RESONANT RAMAN-SCATTERING IN GAASQUANTUM-WELLS

We demonstrate the LO-phonon Raman intensity in GaAs/AlAs multiple qua ntum wells to be inversely proportional to the exciton homogeneous lin ewidth for photon energies resonant with the bandedge exciton. The str ongest Raman scattering is seen at the low-energy side of the exciton peak, where the homogeneous linewidth is narrowest. The energy depende nce of the linewidth deduced from the resonance Raman profile agrees w ell with that measured directly by degenerate-four-wave mixing.