S. Eisebitt et al., EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE ABOVE THE CO L2,3 EDGES IN ION-BEAM-SYNTHESIZED COSI2, Physical review. B, Condensed matter, 48(23), 1993, pp. 17388-17392
An analysis of the extended x-ray-absorption fine structure recorded a
t the Co L2,3 edges of CoSi2 is presented. Absorption was monitored by
partial fluorescence yield, allowing us to investigate samples buried
in a silicon wafer by means of ion-beam synthesis. The absorption spe
ctrum is not distorted by Bragg diffraction beams due to the low photo
n energies. The additional Co L1 background is modeled by a splining p
rocedure. The first-shell Co-Si distance in the annealed specimen was
determined to be 2.32 +/- 0.05 angstrom.