EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE ABOVE THE CO L2,3 EDGES IN ION-BEAM-SYNTHESIZED COSI2

Citation
S. Eisebitt et al., EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE ABOVE THE CO L2,3 EDGES IN ION-BEAM-SYNTHESIZED COSI2, Physical review. B, Condensed matter, 48(23), 1993, pp. 17388-17392
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
23
Year of publication
1993
Pages
17388 - 17392
Database
ISI
SICI code
0163-1829(1993)48:23<17388:EXFATC>2.0.ZU;2-0
Abstract
An analysis of the extended x-ray-absorption fine structure recorded a t the Co L2,3 edges of CoSi2 is presented. Absorption was monitored by partial fluorescence yield, allowing us to investigate samples buried in a silicon wafer by means of ion-beam synthesis. The absorption spe ctrum is not distorted by Bragg diffraction beams due to the low photo n energies. The additional Co L1 background is modeled by a splining p rocedure. The first-shell Co-Si distance in the annealed specimen was determined to be 2.32 +/- 0.05 angstrom.