ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES

Authors
CRICENTI A SELCI S RIGHINI M FERRARI L GENEROSI R BARCHESI C ZUCCARO F
Citation
A. Cricenti et al., ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES, Physical review. B, Condensed matter, 48(23), 1993, pp. 17588-17590
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
23
Year of publication
1993
Pages
17588 - 17590
Database
ISI
SICI code
0163-1829(1993)48:23<17588:IFISFD>2.0.ZU;2-2
Abstract
The early stages of Sb films deposited at room temperature on Si(I 00) 2 X 1 surfaces have been investigated by angle-integrated and angle-re solved Auger, spectroscopy. A comparison between the experimental resu lts and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annea ling, a uniform overlayer never develops up to films 4 nm thick.