MICROSTRUCTURE AND DIELECTRIC CHARACTERISTICS OF (PBXBA0.5-XSR0.5)TIO3 CERAMICS

Authors
Citation
R. Ganesh et E. Goo, MICROSTRUCTURE AND DIELECTRIC CHARACTERISTICS OF (PBXBA0.5-XSR0.5)TIO3 CERAMICS, Journal of the American Ceramic Society, 79(1), 1996, pp. 225-232
Citations number
17
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00027820
Volume
79
Issue
1
Year of publication
1996
Pages
225 - 232
Database
ISI
SICI code
0002-7820(1996)79:1<225:MADCO(>2.0.ZU;2-P
Abstract
Microstructural and dielectric properties of the PbxBa0.5-x-Sr0.5TiO3 system have been studied, It is found that this system forms a solid s olution in the entire composition range (0.01 less than or equal to x less than or equal to 0.5) and is cubic for the x = 0, 0.1, and 0.2 co mpositions and tetragonal for other compositions, Measurements of the dielectric constant as a function of temperature reveal that this mate rial is ferroelectric at room temperature for the x > 0.2 compositions and has a broad paraelectric-ferroelectric transition region, No shif t in the dielectric maxima was noted; however, there is a slight sprea d in the dielectric constant with frequency for the x = 0.4 compositio n, A quantitative model to mathematically analyze the effect of compos ition fluctuations on the dielectric broadening for a ternary system i s presented, Transmission electron microscopic studies reveal the pres ence of 90 degrees ferroelectric domains oriented along the {01(1) ove r bar} planes for the x = 0.3 and 0.4 compositions.