ELECTRICAL AND OPTICAL CHARACTERIZATION OF EXTENDED DEFECTS IN SIMOX STRUCTURES

A novel electron beam induced current (EBIC) technique, which utilizes two adjacent front contacts (one Schottky and one Ohmic), has been de veloped to characterize electrically active extended defects in the si licon overlayer of SIMOX structures. The results have been compared wi th photoluminescence measurements on the same samples. EBIC measuremen ts on n-type SIMOX layers show that dislocations and precipitates pres ent in the overlayer act as recombination centres. PL spectra exhibit dislocation-related emission, the intensity of which correlates with t he change in density of extended defects measured by EBIC as the exper iments are scanned across the wafer. P-type SIMOX material is found to contain stacking fault tetrahedra and pyramidals at the upper silicon -oxide interface and threading dislocations extending across the Si ov erlayer, but the PL emission of these defects is negligible. Thinning the overlayer by a sacrificial oxidation process creates oxidation-ind uced stacking faults in the overlayer, which give rise to strong dislo cation-related PL emission. It is demonstrated that electrically activ e extended defects in the silicon overlayers of SIMOX structures are a lso optically active, and that PL measurements can provide a valuable insight into the electrical activity of the thin overlayers in these s tructures.