DIELECTRIC SUSCEPTIBILITY OF AMORPHOUS III-V COMPOUND SEMICONDUCTORS

Authors
ACHARYA RN TRIPATHY PC SAHU T
Citation
Rn. Acharya et al., DIELECTRIC SUSCEPTIBILITY OF AMORPHOUS III-V COMPOUND SEMICONDUCTORS, Semiconductor science and technology, 11(1), 1996, pp. 44-47
Citations number
32
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
1
Year of publication
1996
Pages
44 - 47
Database
ISI
SICI code
0268-1242(1996)11:1<44:DSOAIC>2.0.ZU;2-4
Abstract
We analyse, for the first time, the effect of bond angle disorder on t he dielectric constant epsilon(0) of a model amorphous III-V compound semiconductor. We adopt a linear combination of hybrids method develop ed by us. We introduce distortion in bond angles and construct an orth onormal basis set for the disorder network to obtain an expression for epsilon(0)(Delta) in terms of bond-angle distortion parameter Delta. We analyse epsilon(0)(Delta) with increasing Delta. Our results agree well with experiment.