BINDING-ENERGIES OF EXCITONS IN IONIC QUANTUM-WELL STRUCTURES

We have calculated the binding energies of excitons in quantum well st ructures based on ionic semiconductors by including the electron-hole interactions with the longitudinal optical phonon field. We have taken into account these interactions by using different effective interact ion potentials between the electron and the hole as derived by Haken, by Aldrich and Bajaj, and by Pollman and Buttner. We have calculated t he binding energies of excitons in several ionic quantum well structur es as functions of well width using these effective potentials by foll owing a variational approach, We find that the values of the exciton b inding energies calculated using these potentials are always larger th an those obtained using a Coulomb potential screened by a static diele ctric constant. We compare our results with those of some recent calcu lations.