MAGNETIC IMPURITY IN A QUANTUM-WELL OF A IV-VI NARROW-GAP SEMICONDUCTOR

Authors
DUGAEV VK LITVINOV VI PETROV PP
Citation
Vk. Dugaev et al., MAGNETIC IMPURITY IN A QUANTUM-WELL OF A IV-VI NARROW-GAP SEMICONDUCTOR, Semiconductor science and technology, 11(1), 1996, pp. 80-83
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
1
Year of publication
1996
Pages
80 - 83
Database
ISI
SICI code
0268-1242(1996)11:1<80:MIIAQO>2.0.ZU;2-G
Abstract
We study the magnetic density distribution created by a separate magne tic impurity placed inside a IV-VI semiconductor quantum well. The abs ence of carriers is assumed, so that the induced magnetic density is d ue to virtual electron-hole excitations. The origin of this effect is analogous to the vacuum screening of charge in quantum electrodynamics . We calculate the magnetic density for different positions of the imp urity within the well. The interaction between magnetic impurities in the quantum well is also calculated.