COMPOSITION, STRUCTURE AND MORPHOLOGY OF DIP-COATED RAPID THERMAL ANNEALED CDS AND NONAQUEOUS ELECTRODEPOSITED CDTE

The composition, structure and morphology of CdTe and CdS films and Cd S/CdTe heterojunction devices have been studied using XPS, XRD and SEM . Chemical bath deposition and electrodeposition in non-aqueous media were used for growing CdS and CdTe respectively. It has been shown tha t the rapid thermal annealing of CdS yields oriented, stoichiometric, low-resistivity films. The evidence obtained from XPS has been used to demonstrate that the oxygen incorporated within CdS can be completely leached out in a short time using rapid thermal annealing. The change s brought out in the CdTe films as a result of junction processing hav e also been analysed. It has been shown that the non-aqueous electrode position of CdTe over rapid thermal annealed CdS can be a potentially useful route for growing CdS/CdTe heterojunctions.