Gi. Teslenko et al., ACCUMULATION AND EXCLUSION OF EXCESS CARRIERS OBSERVED IN INHOMOGENEOUS GERMANIUM SAMPLES, Semiconductor science and technology, 11(1), 1996, pp. 133-134
IR probing measurements of germanium samples are presented, showing, a
ccording to the theory [1], accumulation and exclusion effects due to
current flow through an internal built-in electric field appearing in
the inhomogeneous pari of the crystal.