Ii. Kaya et al., IN-SITU FOCUSED ION-BEAM IMPLANTATION FOR THE FABRICATION OF A HOT-ELECTRON TRANSISTOR OSCILLATOR STRUCTURE, Semiconductor science and technology, 11(1), 1996, pp. 135-138
Recent advances using in situ focused ion beam implantation during an
MBE growth interruption have been exploited to fabricate planar GaAs h
ot electron structures without the need for shallow ohmic contacts. Th
is novel fabrication route shows a very high yield and has been used t
o demonstrate a prototype high-frequency oscillator structure based on
electron multiplication in the base layer. Existing devices show tran
sfer factors in excess of unity as well as reversal of the base curren
t at high injection levels, which are the prerequisites for oscillator
action. Future improvements in device design are discussed.