OPTIMIZATION OF THE DEPOSITION AND ANNEALING PARAMETERS OF PARAELECTRIC PLZT(28 0/100) THIN-FILMS GROWN BY RF MAGNETRON SPUTTERING/

Authors
JABER B REMIENS D CATTAN E THIERRY B
Citation
B. Jaber et al., OPTIMIZATION OF THE DEPOSITION AND ANNEALING PARAMETERS OF PARAELECTRIC PLZT(28 0/100) THIN-FILMS GROWN BY RF MAGNETRON SPUTTERING/, Sensors and actuators. A, Physical, 51(1), 1995, pp. 1-4
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
51
Issue
1
Year of publication
1995
Pages
1 - 4
Database
ISI
SICI code
0924-4247(1995)51:1<1:OOTDAA>2.0.ZU;2-D
Abstract
Optimisation of the deposition and annealing conditions for the prepar ation of PLZT (28/0/100) thin films using RF magnetron sputtering with oxide powder targets has been studied. Good quality materials have be en obtained on substrates of (0001) Al2O3, SiO2/Si and Pt/Ti/SiO2Si. D ielectric and optical properties of the thin films were characterised. Transmission of thin films is more than 80% in the visible spectrum r ange.