A comprehensive summary of the operation of two-contact semiconductor
self-pulsating laser diode (SP-LD) in both return-to-zero (RZ) and non
-return-to-zero (NRZ) optical transmission systems is presented. Resul
ts demonstrate that this type of device has great potential as the bas
is for all-optical clock recovery circuits at multi-Gbits rates for sw
itching applications. Results describe the basic device behaviour show
ing how zinc doping the shorter (absorber) region of the device enable
s repeatable and controlled GHz pulsations, within the range similar t
o 0.6 to > 5.5 GHz and tunability (via the DC gain current) over many
GHz, to be achieved. Experimental results show that the SP-LD can be l
ocked with mu W of incident power to produce a locked oscillator with
a linewidth of < 10 Hz at 5 GHz and with 20 dB power gain across the d
evice. New results, addressing the pattern dependence, demonstrate tha
t long breaks (up to similar to 30 'zeros') in the clock can be accomm
odated without significant degradation of the locked clock purity; the
length of break being dependent on the initial state of locking. Othe
r new results show that the lock-up time for such circuits is of the o
rder of 100 clock cycles. System performance is investigated using the
se devices within a 20 Gbit/s (4 x 5 Gbit/s) optical-time-division-mul
tiplexed demonstrator; the results showing no significant degradation
of the bit-error-ratio performance. Other system results at 3.2 Gbit/s
show that this technique can be applied to NRZ systems when also util
ising a nonlinear effect within a similar device biased below threshol
d, and identifying the differences from RZ operation. These results sh
ow that such an approach could provide major benefits in developing th
e next generation of telecommunications networks.