INVESTIGATION OF POROUS SILICON-CARBIDE BY METHODS OF VIBRATIONAL ANDLUMINESCENCE SPECTROSCOPY

Samples of porous silicon carbide, prepared by anodic etching of initi al n-type 6H-SiC crystals, were investigated by the methods of infrare d reflection, Raman scattering, and pulsed and continuous photolumines cence. The beta-SiC phase was discovered in the porous layer. An attem pt was made to find a correlation between the volume of this phase and the amplitude of the wide band of continuous red-green photoluminesce nce arising in the porous layer. It was found that the samples prepare d under different conditions fall into two groups: The correlation app arently exists in one group and is completely absent in the other grou p. It is assumed that some centers (defects) which are produced by etc hing are responsible for the strong photoluminescence in the second gr oup of samples. (C) 1995 American Institute of Physics.