The change in the intensity of GaAs (100) photoluminescence after surf
ace passivation in acqueous solutions of sodium sulfide was studied as
a function of the treatment time, temperature, and composition of the
sulfide solution. It was shown that as the treatment time in the sulf
ide solution is increased, the intensity of the photoluminescence maxi
mum increases and then saturates. The saturation time depends on the a
lkalinity of the solution and on the concentration of the sulfide ions
in it. For a fixed treatment time the intensity of the photoluminesce
nce peak increases with the sulfidation temperature. The data from x-r
ay photoelectron spectroscopy of the sulfidized surfaces show that Ga-
S bonds are present and that the content of arsenic oxides on the semi
conductor surface decreases as the sulfidation temperature increases.
The increase in the photoluminescence intensity with sulfide passivati
on is associated mainly with the decrease in the content of these oxid
es. (C) 1995 American Institute of Physics.