CHARACTERISTIC FEATURES OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF GAINASSB DOUBLE-HETEROSTRUCTURE LASERS WITH A THIN ACTIVE-REGION

The temperature dependence of the threshold current density of double- heterostructure lasers, based on the solid solution GaInAsSb, with a t hin active region is studied theoretically. It is shown that a new Aug er recombination mechanism, which is due to the interaction of current carriers with the heteroboundary, contributes to the threshold curren t in double-heterostructure structures with a thin active region. It i s also shown that at low temperatures the new Auger recombination chan nel is the main mechanism for nonradiative recombination of carriers. The theoretically computed temperature dependence of the threshold cur rent density is compared with the experimental data. (C) 1995 American Institute of Physics.