SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE

Authors
BERT NA CHALDYSHEV VV LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR
Citation
Na. Bert et al., SPATIAL ORDERING OF ARSENIC CLUSTERS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 29(12), 1995, pp. 1170-1171
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
12
Year of publication
1995
Pages
1170 - 1171
Database
ISI
SICI code
1063-7826(1995)29:12<1170:SOOACI>2.0.ZU;2-K
Abstract
It is shown that two-dimensional layers of nanosize arsenic clusters, separated by a GaAs matrix which does not contain clusters, can be for med by means of delta-doping with indium in GaAs films grown by molecu lar-beam epitaxy at low temperature (200 degrees C). Spatially-ordered cluster structures were obtained in epitaxial GaAs films doped with S i donors and Be accepters as well as films which were not doped with e lectrically-active impurities, (C) 1995 American Institute of Physics.