Jn. Burghartz et al., MICROWAVE INDUCTORS AND CAPACITORS IN STANDARD MULTILEVEL INTERCONNECT SILICON TECHNOLOGY, IEEE transactions on microwave theory and techniques, 44(1), 1996, pp. 100-104
Spiral inductors and metal-to-metal capacitors for microwave applicati
ons, which are integrated on a silicon substrate by using standard 0.8
mu m BiCMOS technology, are described. Optimization of the inductors
has been achieved by tailoring the vertical and lateral dimensions and
by shunting several interconnect metal layers together. Lumped elemen
t models of inductors and capacitors provide detailed understanding of
the important geometry and technological parameters on the device cha
racteristics. The high quality factors of nearly 10 for the inductors
are among the best results in silicon, particularly when using standar
d silicon technology.