EFFECT OF NITROGEN-OXYGEN COMPLEX ON ELECTRICAL-PROPERTIES OF CZOCHRALSKI SILICON

Effect of nitrogen-oxygen (N-O) complexes on electrical properties of nitrogen-rich Czochralski (CZ) silicon grown in a nitrogen atmosphere has been investigated during annealing in the temperature range from 6 50 to 1000 degrees C. Electrical and low temperature (8 K) Fourier tra nsmission infrared spectrometer (FTIR) measurements point out that the carrier concentration of the nitrogen-rich silicon varies with the an nealing time and temperature, which is due to the formation and elimin ation of the N-O complexes acting as shallow thermal donors. After the N-O complexes are eliminated by annealing above 900 degrees C the car rier concentration of the nitrogen-rich silicon is stabilized. It is s uggested that the N-O complexes attract more oxygen atoms to form new electrically inactive N-O clusters, and lose their electrical activity . (C) 1996 American Institute of Physics.