GROWTH-RELATED STRESS AND SURFACE-MORPHOLOGY IN HOMOEPITAXIAL SRTIO3 FILMS

Citation
Ej. Tarsa et al., GROWTH-RELATED STRESS AND SURFACE-MORPHOLOGY IN HOMOEPITAXIAL SRTIO3 FILMS, Applied physics letters, 68(4), 1996, pp. 490-492
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
4
Year of publication
1996
Pages
490 - 492
Database
ISI
SICI code
0003-6951(1996)68:4<490:GSASIH>2.0.ZU;2-4
Abstract
The lattice parameter and surface morphology of homoepitaxial SrTiO3 f ilms were found to depend on the ambient oxygen pressure during growth . The homoepitaxial layers were grown by pulsed laser deposition with static ambient oxygen pressures of 100, 10, and 1 mTorr. The surface r oughness of the films increased with increasing ambient growth pressur e. In each case, the measured out-of-plane lattice parameter of the fi lm was larger than that of the substrate. The mismatch between film an d substrate increased with decreasing growth pressure. Compressive str esses of similar to 0.28, 1.2, and 2.0 GPa were determined for homoepi taxial SrTiO3 layers deposited at 100, 10, and 1 mTorr, respectively. (C) 1996 American Institute of Physics.