RESONANT-TUNNELING PROPERTIES OF SINGLE-ELECTRON TRANSISTORS WITH A NOVEL DOUBLE-GATE GEOMETRY

We describe the operation of single electron transistors with a double -gate geometry defined by Ga focused ion beam implanted in-plane gates and line Schottky gates. The in-plane gates are used to squeeze the c hannel and to increase the charging energy. The Schottky gates are pla ced on the channel to form the tunnel junctions. lndependent control o f these gates is useful to define the geometry of single electron tran sistors. We found strong resonances exhibiting negative differential r esistance in the small devices, which is attributed to tunneling throu gh zero-dimensional states when the barrier has a parabolic-shaped pot ential. (C) 1996 American Institute of Physics.