REACTIVE ION ETCHING OF FERROELECTRIC SRBI2TAXNB2-XO9 THIN-FILMS

Ferroelectric SrBi2TaxNb2-xO9 thin films were patterned using reactive ion etching. Considering the environmental impact effect, CHCIFCF3, a special etching gas, known to be less environmentally hazardous compa red to the other hydrofluorocarbons, was employed in this study. The e tch rates as a function of etching parameters were investigated. An et ch rate of 20 nm/min was obtained. Surface compositional change during etching was monitored by x-ray photoelectron spectroscopy. Surface re sidues were removed by a postetching cleaning process. (C) 1996 Americ an Institute of Physics.