PHOTOELECTROCHEMICAL CHARACTERISTICS OF N-INSE SINGLE-CRYSTALS

Authors
POULIOS I FARMAKIS K PARASKEVOPOULOS K
Citation
I. Poulios et al., PHOTOELECTROCHEMICAL CHARACTERISTICS OF N-INSE SINGLE-CRYSTALS, Collection of Czechoslovak Chemical Communications, 60(12), 1995, pp. 2039-2046
Citations number
24
Categorie Soggetti
Chemistry
Journal title
Collection of Czechoslovak Chemical Communications → ACNP
ISSN journal
00100765
Volume
60
Issue
12
Year of publication
1995
Pages
2039 - 2046
Database
ISI
SICI code
0010-0765(1995)60:12<2039:PCONS>2.0.ZU;2-Z
Abstract
The photoelectrochemical behaviour of n-InSe single crystals in aqueou s solutions has been studied in the presence and absence of several re dox systems. Among them, Ce-3+/4+ and KI/I-2 yielded the highest photo currents, photovoltages and show the highest stability. The semiconduc tor energy gap E(g) = 1.2 eV, has been calculated from transmittance m easurements. The flat band potential U-FB = -0.40 V vs NHE and the don or density have been calculated from differential capacity measurement s.